|Table of Contents|
[1].Topology paving the way to controllable readout of ferroelectricity dself-assembled topologically confined domain walls become the key to ferroelectric memory[J].Journal of Materiomics,2019,(01):49-50.[doi:https://doi.org/10.1016/j.jmat.2018.11.005]
 Chungang Duan.Topology paving the way to controllable readout of ferroelectricity dself-assembled topologically confined domain walls become the key to ferroelectric memory[J].Journal of Materiomics,2019,(01):49-50.[doi:https://doi.org/10.1016/j.jmat.2018.11.005]
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Topology paving the way to controllable readout of ferroelectricity dself-assembled topologically confined domain walls become the key to ferroelectric memory(PDF)



Journal of Materiomics[ISSN:/CN:]

volumne:
Issue:
2019年01期
Page:
49-50
Research Field:
Publishing date:
2019-03-30

Info

Title:
Topology paving the way to controllable readout of ferroelectricity dself-assembled topologically confined domain walls become the key to ferroelectric memory
Highlights:
Chungang Duan
Department of Optoelectronics, Key Laboratory of Polar Materials and Devices, MOE, East China Normal University, Shanghai, 200241, China
Keywords:
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PACS:
-
DOI:
https://doi.org/10.1016/j.jmat.2018.11.005
Abstract:
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References:

[1] Buck D. Ferroelectrics for digital information storage and switching. Report R- 212. MIT; 1952. June.
[2] Tsymbal EY, Hermann Kohlstedt. Tunneling across a ferroelectric. Science 2006;313(5784):181e3.
[3] Bibes M, Barth el emy A. Multiferroics: towards a magnetoelectric memory. Nat Mater 2008;7(6):425.
[4] Velev JP, Duan C-G, Burton J, Smogunov A, Niranjan MK, Tosatti E, et al. Magnetic tunnel junctions with ferroelectric barriers: prediction of four resistance ?states from first principles. Nano Lett 2008;9(1):427e32.
[5] Sharma P, Zhang Q, Sando D, Lei CH, Liu Y, Li J, et al. Nonvolatile ferroelectric domain wall memory. Sci Adv 2017;3(6), e1700512.
[6] Jiang J, Bai ZL, Chen ZH, He L, Zhang DW, Zhang QH, et al. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. Nat Mater 2018;17(1):49.
[7] Li Z, Wang Y, Tian G, Li P, Zhao L, Zhang F, et al. High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states. Sci Adv 2017;3(8), e1700919.
[8] Ma J, Ma J, Zhang Q, Peng R,Wang J, Liu C, et al. Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls. Nat Nanotechnol 2018;13(10):947.

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Last Update: 2019-03-30