Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ heterostructures(PDF)

Journal of Materiomics[ISSN:/CN:]

volumne:

Issue:

2018年04期

Page:

412-417

Research Field:

Publishing date:

2018-11-22

Info

Title:

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ heterostructures

Highlights:

Zhi-Xue Xu^a; Jian-Min Yan^a; Meng Xu^a; Ting-Wei Chen^b; Lei Guo^a; c; Guan-Yin Gao^d; Xiao-Guang Li^d; Hao-Su Luo^a; Yu Wang^b; Ren-Kui Zheng^b; a

^aState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;^bSchool of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China;^cSchool of Physics, Southeast University, Nanjing, 211189, China;^dHefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, University of Science and Technology of China, Hefei, 230026, China

Keywords:

Ferroelastic strain;  Electronic transport;  PMN-PT;  Heterostructure;  Strain effect

PACS:

-

DOI:

https://doi.org/10.1016/j.jmat.2018.09.007

Abstract:

We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71?Pb(Mg_1/3Nb_2/3)O₃-0.29PbTiO₃ (PMN-0.29?PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable non-180° ferroelastic domain switching of the PMN-0.29?PT on the electronic properties of the GeTe films. The in-plane strain of the PMN-0.29?PT could be modulated continuously and reversibly by electric fields in a nonvolatile manner and could be effectively transferred to the GeTe films. Based on this, we realized reversible and nonvolatile resistance switching and obtained multilevel stable nonvolatile resistance states with good stability and endurance at T?=?300?K by applying appropriate asymmetrical bipolar electric fields to the PMN-0.29?PT(111) substrates along the thickness direction. Such heterostructures may be used for multilevel data storage that allows each unit to store multiple bits of information and thus improve the memory density. Our investigation would be beneficial for the fabrication of nonvolatile memory devices using PMN-xPT-based heterostructures.

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